WebMay 29, 2015 · We investigated the effects of top gate voltage (V TG) and temperature (in the range of 25 to 70 o C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V TG from -20V to +20V, decreases the threshold voltage (V TH) from 19.6V to 3.8V and … WebApr 25, 2024 · The gate size of fabricated TFT is 48-μm × 505-μm. To investigate the large mobility improvement, X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), cross-sectional transmission...
Double-gate thin film transistor with suspended-gate applicable to ...
WebAug 24, 2024 · e Illustration of simple dual-gate architecture. f Transfer characteristic and field effect mobility of dual gated TFT. g Transfer curves of dual-gate TFT with various channel lengths. h Samplings ... WebMay 29, 2024 · This work developed a back-channel-etched In-Ga-Zn-Sn-O (IGZTO) thin-film transistor (TFT) with a high mobility of 41 cm 2 /Vs by optimizing both the IGZTO composition and the fabrication process. Furthermore, an effective mobility of 99 cm 2 /Vs was achieved for an IGZTO-TFT with a dual-gate structure. Citing Literature Volume 50, … dons classic 22 for sale
Investigation of the Electrical Properties of Double-Gate Dual …
Webhigh mobility as well as high reliability were obtained at the same time. Fig. 1 Schematic cross-sectional view of the fabricated top gate IGZO-TFT. Fig. 2 Hall mobility and Career concentration of various IGZO. Fig. 3 Schematic diagram of Hydrogen and Oxygen balance in the IGZO channel of va riou s IG ZO . 469 IDW ’19 WebJul 25, 2013 · Dual gate amorphous-InGaZnO 4 (a-IGZO) thin-film transistors (TFTs) with a bottom gate that covers the whole channel and a top gate that covers only a small portion of the channel are investigated. WebDec 1, 2014 · High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer 2024, Applied Physics Letters Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature 2024, Micromachines View all citing articles on Scopus Recommended articles (6) … don scott electric sky